Future trend of Si power device-Reference-Cited by-同舟云学术

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Future trend of Si power device

Published:2014 Issue:3 Volume:11 Page:20142002-20142002
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Minato Tadaharu¹,Sato Katsumi²

Affiliation:

1. Power Semiconductor Device Development Dept., Power Device Works, Mitsubishi Electric Co.

2. Power Device Works, Mitsubishi Electric Co.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/11/3/11_11.20142002/_pdf

Reference21 articles.

1. [1] G. Majumdar: PCC Nagoya, Plenary Speech (2007).

2. [2] J. Yamashita, C. Yoshida, C. Fujii, K. Takanashi and J. Moritani: Proc. ISPSD’01 (2001) 421.

3. [3] M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue and I. Takata: Proc. ISPSD’94 (1994) 411.

4. [4] H. Takahashi, H. Haruguchi, H. Hagino and T. Yamada: Proc. ISPSD’96 (1996) 349.

5. [5] H. Takahashi, S. Aono, E. Yoshida, J. Moritani and S. Hine;Proc. ISPSD’01 (2001) 445.

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