How to Design an Outphasing Power Amplifier with Digital Predistortion
Author:
Affiliation:
1. Fujitsu
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E104.C/10/E104.C_2021MMI0006/_pdf
Reference31 articles.
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2. [2] M. Kamiyama, R. Ishikawa, and K. Honjo, “5.65 GHz high-efficiency GaN HEMT power amplifier with harmonics treatment up to fourth order,” IEEE Microw. Wireless Compon. Lett., vol.22, no.6, pp.315-317, June 2012.
3. [3] T. Yao, R. Ishikawa, Y. Takayama, K. Honjo, H. Kikuchi, T. Okazaki, K. Ueda, and E. Otobe, “Frequency characteristic of power efficiency for 10 W/30 W-class 2 GHz band GaN HEMT amplifiers with harmonic reactive terminations,” in Proc. Asia-Pacific Microw. Conf., pp.745-747, Nov. 2013. 10.1109/apmc.2013.6694917
4. [4] H. Chireix, “High Power Outphasing Modulation,” Proc. IRE, vol.23, no.11, pp.1370-1392, Nov. 1935. 10.1109/jrproc.1935.227299
5. [5] W.H. Doherty, “A New High Efficiency Power Amplifier for Modulated Waves,” Proc. IRE, vol.24, no.9, pp.1163-1182, Sept. 1936. 10.1109/jrproc.1936.228468
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