Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors-Reference-Cited by-同舟云学术

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors

Published:2009 Issue:6 Volume:E92-C Page:777-784
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MIYAKE Masataka¹,HORI Daisuke¹,SADACHIKA Norio¹,FELDMANN Uwe¹,MIURA-MATTAUSCH Mitiko¹,MATTAUSCH Hans Jürgen¹,OHGURO Tatsuya²,IIZUKA Takahiro²,TAGUCHI Masahiko²,MIYAMOTO Shunsuke²

Affiliation:

1. Hiroshima University

2. Semiconductor Technology Academic Research Center

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E92.C/6/E92.C_6_777/_pdf

Reference10 articles.

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2. Substrate Voltage and Accumulation-Mode MOS Varactor Capacitance

3. [3] H.S. Muthali, T.P. Thomas, and I.A. Young, “A CMOS 10Gb/s SONET transceiver, ” Proc. 29th European Solid-State Circuits Conf. (ESSCIRC), pp.281-284, Sept. 2003.

4. [4] J. Victory, C.C. McAndrew, and K. Gullapalli, “A time-dependent, surface potential based compact model for MOS capacitors, ” IEEE Electron Device Lett., vol.22, no.5, pp.245-247, May 2001.

5. [5] M. Miyake, N. Sadachika, D. Navarro, Y. Mizukane, K. Matsumoto, T. Ezaki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, and S. Miyamoto, “Surface-potential-based metal-oxide-silicon-varactor model for RF applications, ” Jpn. J. Appl. Phys., vol.46, no.4B, pp.2091-2095, 2007.