K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W-Reference-Cited by-同舟云学术

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W

Published:2012 Issue:8 Volume:E95.C Page:1327-1331
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

NEGORO Noboru¹,KURODA Masayuki¹,MURATA Tomohiro¹,NISHIJIMA Masaaki¹,ANDA Yoshiharu¹,SAKAI Hiroyuki¹,UEDA Tetsuzo¹,TANAKA Tsuyoshi¹

Affiliation:

1. Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E95.C/8/E95.C_1327/_pdf

Reference9 articles.

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3. [3] D. Ducatteau A. Minko, V. Hoel, E. Morvan, E. Delos, B. Grimbert, H. Lahreche, P. Bove, C. Gaquiere, J.-C. De Jaeger, and S. Delage, “Output power density of 5.1W/mm at 18GHz with an AlGaN/GaN HEMT on Si substrate,” IEEE Electron Device Lett., vol.27, no.1, pp.7-9, Jan. 2006.

4. [4] S. Yoshida, M. Tanomura, Y. Murase, K. Yamanoguchi, K. Ota, K. Matsunaga, and H. Shimawaki, “A 76GHz GaN-on-Silicon power amplifier for automotive radar systems,” IEEE MTT-S Intl. Microwaves Symp., pp.665-668, 2009.

5. [5] T. Ueda, Y. Uemoto, T. Tanaka, and D. Ueda, “GaN transistors for power switching and millimeter-wave applications,” International Journal of High Speed Electronics and Systems, vol.19, no.1, pp.145-152, 2009.

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