A 28-GHz, -187.4-dBc/Hz-FOMT Low-Phase-Noise CMOS VCO Using an Amplitude-Redistribution Technique

Author:

WACHI Yusuke1,NAGASAKU Toshiyuki1,KONDOH Hiroshi1

Affiliation:

1. Central Research Laboratory, Hitachi, Ltd.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. [1] D.Y. Jung and C.S. Park, “Power efficient Ka-band low phase noise VCO in 0.13µm CMOS,” IEEE Electron. Lett., vol.44, no.10, pp.630-631, May 2008.

2. [2] T.-H. Huang and P.-L. You, “27-GHz low phase-noise CMOS standing-wave oscillator for millimeter wave applications,” MTT-S IMS, Dig. Tech Papers, pp.367-370, June 2008.

3. [3] C.-H. Chiu, K.-H. Liang, H.-Y. Chang, and Y.-J. Chan, “A low phase noise 26-GHz push-push VCO with a wide tuning range in 0.18µm CMOS technology,” Asian Microwave Symp. Dig. Tech. Papers, pp.1131-1134, Dec. 2006.

4. [4] D.D. Kim, J. Kim, J.-O. Plouchart, et al., “A 70GHz manufacturable complementary LC-VCO with 6.14GHz tuning range in 65nm SOI CMOS,” ISSCC Dig. Tech Papers, pp.540-541, Feb. 2007.

5. [5] J. Kim, J.-O. Plouchart, N. Zamdmer, R. Trzcinski, K. Wu, B.J. Gross, and M. Kim, “A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12µm SOI CMOS,” IEEE ISSCC Dig. Tech. Papers, pp.416-417, Feb. 2005.

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