Injection Locking of Rotary Dissipative Solitons in Closed Traveling-Wave Field-Effect Transistor-Reference-Cited by-同舟云学术

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Injection Locking of Rotary Dissipative Solitons in Closed Traveling-Wave Field-Effect Transistor

Published:2020-11-01 Issue:11 Volume:E103.C Page:693-696
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

NARAHARA Koichi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Kanagawa Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E103.C/11/E103.C_2020ECS6001/_pdf

Reference9 articles.

1. [1] A.S. Podgorsky and L.Y. Wei, “Theory of traveling-wave transistors,” IEEE Trans. Electron Devices., vol.29, no.12, pp.1845-1853, 1982. 10.1109/t-ed.1982.21040

2. [2] K. Narahara, “Dynamics of dissipative solitons developed in a closed traveling-wave field-effect transistor,” Int. J. Circ. Theor. Appl., vol.46, no.11, pp.2000-2010, 2018. 10.1002/cta.2509

3. [3] K. Narahara, “Synchronization of dissipative solitons in a system of closed traveling-wave field-effect transistors,” Nonlinear Dyn., vol.94, pp.711-721, 2018. 10.1007/s11071-018-4388-6

4. [4] Y.S. Kivshar and B.A. Malomed, “Dynamics of solitons in nearly integrable systems,” Rev. Mod. Phys., vol.61, no.4, pp.763-915, 1989. 10.1103/revmodphys.61.763

5. [5] K. Narahara and S. Nakagawa, “Nonlinear traveling-wave field effect transistors for amplification of short electrical pulses,” IEICE Electron. Express, vol.7, no.16, pp.1188-1194, 2010. 10.1587/elex.7.1188

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