High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices-Reference-Cited by-同舟云学术

High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices

Published:2019-04-01 Issue:4 Volume:E102.C Page:340-346
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

KANAZAWA Shigeru¹,YAMAZAKI Hiroshi²,UEDA Yuta¹,KOBAYASHI Wataru²,OGISO Yoshihiro¹,OZAKI Johsuke¹,SHINDO Takahiko¹,TSUNASHIMA Satoshi¹,TANOBE Hiromasa¹,ARARATAKE Atsushi²

Affiliation:

1. NTT Device Innovation Center, NTT Corporation

2. NTT Device Technology Laboratories, NTT Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E102.C/4/E102.C_2018ODI0001/_pdf

Reference15 articles.

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5. [5] W. Kobayashi, T. Yamanaka, M. Arai, N. Fujiwara, T. Fujisawa, K. Tsuzuki, T. Ito, T. Tadokoro, and F. Kano, “Wide temperature range operation of a 1.55-µm 40-Gb/s electroabsorption modulator integrated DFB laser for very short-reach applications,” IEEE Photon. Technol. Lett., vol.21, no.18, pp.1317-1319, Sept. 2009. 10.1109/lpt.2009.2026485

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