Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique-Reference-Cited by-同舟云学术

Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique

Published:2007 Issue:24 Volume:4 Page:775-781
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Ishido Teruki¹,Matsuo Hisayoshi¹,Katayama Takuma¹,Ueda Tetsuzo¹,Inoue Kaoru¹,Ueda Daisuke¹

Affiliation:

1. Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/4/24/4_24_775/_pdf

Reference6 articles.

1. AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure

2. [2] A. Dadgar, J. Blasing, A. Diez, A. Alam, M. Heuken, and A. Krost, “Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1µm in Thickness, ” Jpn. J. Appl. Phys., vol. 39, Part2, no. 11B, pp. L1183-L1185, 2000.

3. [3] J. Komiyama, Y. Abe, S. Suzuki, and H. Nakanishi, “Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers, ” J. Appl. Phys., vol. 100, 033519, 2006.

4. [4] B. Yang, N. J. Park, B. I. Seo, Y. H. Oh, S. J. Kim, S. K. Hong, S. S. Lee, and Y. J. Park, “Nanoscale imaging of grain orientations and ferroelectric domains in (Bi_1-xLa_x)₄Ti₃O₁₂ films for ferroelectric memories, ” Appl. Phys. Lett., vol. 87, 062902, 2005.

5. [5] A. J. Wilkinson, G. Meaden, and D. J. Dingley, “High-resolution elastic strain measurement from electron backscatter diffraction patterns: New levels of sensitivity, ” Ultramicroscopy, vol. 106, pp. 307-313, 2006.

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