A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor-Reference-Cited by-同舟云学术

A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor

Published:2020-06-10 Issue:11 Volume:17 Page:20200160-20200160
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Wang Tengjia¹,Zhou Min¹,Liu Jiarui¹²,Wang Zhiyu¹²,Mo Jiongjiong¹²,Chen Hua¹²,Yu Faxin¹²

Affiliation:

1. School of Aeronautics and Astronautics, Zhejiang University

2. ZJU-Hangzhou Global Scientific and Technological Innovation Center

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/11/17_17.20200160/_pdf

Reference31 articles.

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2. [2] W. Kim and W. Choi: “A 10-Gb/s low-power adaptive continuous-time linear equalizer using asynchronous under-sampling histogram,” IEICE Electron. Express 10 (2013) 20130330 (DOI: 10.1587/elex.10.20130030).

3. [3] G. de Streel, et al.: “SleepTalker: a ULV 802.15.4a IR-UWB transmitter SoC in 28-nm FDSOI achieving 14 pJ/b at 27 Mb/s with channel selection based on adaptive FBB and digitally programmable pulse shaping,” IEEE J. Solid-State Circuits 52 (2017) 1163 (DOI: 10.1109/JSSC.2016.2645607).

4. [4] S. Mohan, et al.: “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circuits 35 (2000) 346 (DOI: 10.1109/4.826816).

5. [5] J. Kim, et al.: “Circuit techniques for a 40Gb/s transmitter in 0.13µm CMOS,” IEEE International Solid-State Circuits Conference Dig. Tech. Papers (2005) 150 (DOI: 10.1109/ISSCC.2005.1493913).

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