Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET
Author:
Affiliation:
1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/17/7/17_17.20200001/_pdf
Reference31 articles.
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2. [2] J. R. Schwank, et al.: “Radiation effects in SOI technologies,” IEEE Trans. Nucl. Sci. 50 (2003) 522 (DOI: 10.1109/TNS.2003.812930).
3. [3] M. Gaillardin, et al.: “Radiation effects in advanced SOI devices: New insights into total ionizing dose and single-event effects,” 2013 IEEE S3S (2013) 1 (DOI: 10.1109/S3S.2013.6716530).
4. [4] J. R. Schwank: “Advantages and limitations of silicon-on-insulator technology in radiation environments,” Microelectron. Eng. 36 (1997) 335 (DOI: 10.1016/S0167-9317(97)00076-2).
5. [5] P. Roche, et al.: “Technology downscaling worsening radiation effects in bulk: SOI to the rescue,” IEDM 2013 (2013) 31 (DOI: 10.1109/IEDM.2013.6724728).
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