High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena-Reference-Cited by-同舟云学术

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

Published:2008 Issue:6 Volume:5 Page:198-203
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Funaki Tsuyoshi¹,Kimoto Tsunenobu²,Hikihara Takashi¹

Affiliation:

1. Kyoto University, Dept. of Electrical Eng.

2. Kyoto University, Dept. of Electronic Science and Eng., Graduate school of Engineering

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/5/6/5_6_198/_pdf

Reference10 articles.

1. [1] K. Shenai, et al., “Optimum semiconductors for high-power electronics, ” IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1811-1823, Sept. 1989.

2. [2] P. Friedrchs, et al., “Application-oriented unipolar switching SIC devices, ”Materials Science Forum, vol. 389-393, pp. 1185-1190, 2000.

3. SiC power diodes provide breakthrough performance for a wide range of applications

4. SiC JFET dc characteristics under extremely high ambient temperatures

5. Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Macroscale and microscale structural mechanisms capable of delaying the fracture of low-temperature and rapid pressureless Ag sintered electronics packaging;Materials Characterization;2023-04

2. Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance;Semiconductor Science and Technology;2022-10-20

3. Transient thermal characterization of β-Ga2O3 Schottky barrier diodes;IEICE Electronics Express;2022-03-25

4. Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes;Materials Science in Semiconductor Processing;2022-03

5. A Compact Device Model for SiC MOSFETs Valid for Wide-Temperature Range;2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2020-09-23