A high-performance wordline voltage-generating system for low-power low-voltage flash memory-Reference-Cited by-同舟云学术

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A high-performance wordline voltage-generating system for low-power low-voltage flash memory

Published:2023-04-10 Issue:7 Volume:20 Page:20230029-20230029
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Zhou Xuemeng¹,Han Yan¹,Ni Ming¹

Affiliation:

1. Institute of Microelectronics and Nanoelectronics, Zhejiang University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/20/7/20_20.20230029/_pdf

Reference31 articles.

1. [1] T.-M. Wang, et al.: “Low-power wordline voltage generator for low-voltage flash memory,” 2006 13th IEEE International Conference on Electronics, Circuits and Systems (2006) 220 (DOI: 10.1109/ICECS.2006.379765).

2. [2] J.S. Meena, et al.: “Overview of emerging nonvolatile memory technologies,” Nanoscale Res. Lett. 9 (2014) 526 (DOI: 10.1186/1556-276X-9-526).

3. [3] W. Zhu, et al.: “A charge pump system with new regulation and clocking scheme,” IEICE Electron. Express 16 (2019) 20190005 (DOI: 10.1587/elex.16.20190005).

4. [4] M. Raquibuzzaman, et al.: “Express: exploiting energy-accuracy tradeoffs in 3D NAND flash memory for energy-efficient storage,” Electronics 11 (2022) 424 (DOI: 10.3390/electronics11030424).

5. [5] V. Rana, et al.: “Row decoder for embedded phase change memory using low voltage transistors,” Microelectronics Journal 81 (2018) 117 (DOI: 10.1016/j.mejo.2018.09.004).

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