A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications-Reference-Cited by-同舟云学术

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A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications

Published:2023-03-10 Issue:5 Volume:20 Page:20220558-20220558
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Li Zheng¹,Chen Zixin¹,Wang Qiaoyu¹,Liu Junqing¹,Pang Jian¹,Shirane Atsushi¹,Okada Kenichi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/20/5/20_20.20220558/_pdf

Reference32 articles.

1. [1] Z. Li, et al.: “A 39-GHz CMOS bi-directional Doherty phased-array beamformer using shared-LUT DPD with inter-element mismatch compensation technique for 5G base-station,” IEEE Symp. VLSI Technology and Circuits (VLSI) (2022) 98 (DOI: 10.1109/VLSITechnologyandCir46769.2022.9830274).

2. [2] J. Pang, et al.: “A 28-GHz CMOS phased-array beamformer utilizing neutralized bi-directional technique supporting dual-polarized MIMO for 5G NR,” IEEE J. Solid-State Circuits 55 (2020) 2371 (DOI: 10.1109/JSSC.2020.2995039).

3. [3] J. Pang, et al.: “A CMOS dual-polarized phased-array beamformer utilizing cross-polarization leakage cancellation for 5G MIMO systems,” IEEE J. Solid-State Circuits 56 (2021) 1310 (DOI: 10.1109//JSSC.2020.3045258).

4. [4] W.L. Chan, et al.: “A 58-65GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply,” IEEE J. Solid-State Circuits 45 (2010) 554 (DOI: 10.1109/JSSC.2009.2039274).

5. [5] M. Vigilante and P. Reynaert: “A wideband class-AB power amplifier with 29-57-GHz AM-PM compensation in 0.9-V 28-nm bulk CMOS,” IEEE J. Solid-State Circuits 53 (2018) 1288 (DOI: 10.1109/JSSC.2017.2778275).

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