Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation

Abstract

Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p- and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 oC to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 oC and 60 minutes would lead to the best result of dopant activation during drive-in process, evidenced by the lowest sheet resistance, which was measured using four-point probe measurement method.