Electrical Transport Properties of van der Waals Insulator CrGeTe<sub>3</sub> under Extremely High Pressure up to 52 GPa-Reference-Cited by-同舟云学术

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Electrical Transport Properties of van der Waals Insulator CrGeTe₃ under Extremely High Pressure up to 52 GPa

Published:2024-04-15 Issue:4 Volume:93 Page:
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Matsumoto Ryo¹^ORCID,Yamamoto Sayaka¹²,Terashima Kensei¹,Yamane Kazuki¹²,Takano Yoshihiko¹²

Affiliation:

1. Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan

Funder

JST-Mirai Program

Japan Society for the Promotion of Science

Publisher

Physical Society of Japan

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.93.044710

Reference38 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

4. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

5. Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

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