Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu2Al10-Reference-Cited by-同舟云学术

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Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu2Al10

Published:2016-03-15 Issue:3 Volume:85 Page:034714
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Hayashi Kyosuke¹,Muro Yuji²,Fukuhara Tadashi²,Kawabata Jo¹,Kuwai Tomohiko³,Takabatake Toshiro¹⁴

Affiliation:

1. Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

2. Department of Intelligent Systems Design Engineering, Faculty of Engineering, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan

3. Graduate School of Science and Engineerings, University of Toyama, Toyama 930-8555, Japan

4. Institute for Advanced Materials Research, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.85.034714

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study;Physical Review B;2018-04-04

2. A Spin-Canted Antiferromagnetic Ground State in CeRu2Al10;Journal of the Physical Society of Japan;2018-01-15

3. Uniaxial pressure effects on the unusual antiferromagnetic transition in the Kondo semiconductor CeOs2Al10;Journal of Physics: Conference Series;2017-04-06

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