Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO2 structure-Reference-Cited by-同舟云学术

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Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO2 structure

Published:2011-09-25 Issue:3 Volume:14 Page:334-338
ISSN:1560-8034
Container-title:Semiconductor Physics Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Steblenko L. P.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Mechanical stresses on the SiSiO2 interface

2. Investigation of the structure of thermal oxide films on silicon by means of cathodoluminescence.;Zamoryanskaya;Fizika Tverdogo Tela,1998

3. Microanalysis and scanning electron microscopy.;Maurice;Les Editions de Physique,1978

4. Silicon dioxide modification by an electron beam

5. Formation of silicon nanoclusters in silicon substrate modification by electron beam.;Bogomolov;Fizika Tverdogo Tela,2001

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. INTRINSIC GETTERING IN SILICON SUBSTRATE OF MOS STRUCTURES UNDER COMBINED INFLUENCE OF RADIATION AND PULSED MAGNETIC FIELDS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2020

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