Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. 1. G.Y. Krasnikov, N.A. Zaitsev, I.V. Matyushkin, A mathematical modeling of the high-temperature silicon oxidation kinetics and the structure of the boundary layer in the Si-SiO2 system // Fizika tekhnika poluprovnikov, 37(1), p. 44-49 (2003), in Russian.
2. 2. A. Stesmans, B. Nouwen, V.V. Afanasyev, Structural degradation of thermal SiO2 on Si by high temperature annealing: defect generation // Phys. Rev. B, 66, No.4, p. 5307-5316 (2002).
3. 3. V.G. Litovchenko, Three-layer model of semiconductor-insulator structure // Semiconductor techniques and microelectronics, No.12, p. 3-12 (1973), in Russian.
4. 4. V.G. Litovchenko, Semiconductor Physics of Layered Structures. Kiev, Naukova Dumka, 1980 (in Russian).
5. 5. O.A. Kulinich, M.A. Glauberman, Investigation of oxidation of silicon subsurface layers // Physics and Chemistry of Solid State, No.1, p. 65-68 (2005), in Ukraine.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献