Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

Author:

Vlaskina S.I.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. A study of polytypism in silicon carbide. Research Department Norton Company, Chippawa, Ontario, Canailo.;Van Loan;Am Mineral,1967

2. 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions. Semiconductor Physics;Vlaskina;Quantum Electronics and Optoelectronics,2013

3. Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

4. Nanostructures in lightly doped silicon carbide crystals with polytypic defects

5. 3C-6H transformation in heated cubic silicon carbide 3C-SiC

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1. Nanocrystalline silicon carbide films for solar cells;Semiconductor Physics Quantum Electronics and Optoelectronics;2016-09-30

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