Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin-Reference-Cited by-同舟云学术

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Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin

Published:2013-12 Issue:12 Volume:58 Page:1165-1170
ISSN:2071-0186
Container-title:Ukrainian Journal of Physics
language:
Short-container-title:Ukr. J. Phys.

Author:

Rudenko R.M., ,Kras’ko M.M.,Voitovych V.V.,Kolosyuk A.G.,Povarchuk V.Yu.,Kraichynskyi A.M.,Yukhymchuck V.O.,Bratus’ V.Ya.,Voitovych M.V.,Zaloilo I.A., , , , , , , , ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

General Physics and Astronomy

Reference25 articles.

1. Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin

2. Properties of amorphous hydrogenated silicon‐tin alloys prepared by radio frequency sputtering

3. Study of the hydrogen stability in evaporated amorphous Si1−xSnx:H (0≤x≤0.2) alloys by neutron scattering and exodiffusion measurements

4. The effect of Sn impurity on the optical and structural properties of thin silicon films

5. Structure and d.c. conductivity of amorphous Si1−xSnx alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films;Ukrainian Journal of Physics;2020-03-26

2. FABRICATION OF BINARY SILICON-BASED NANOCRYSTALS BY PLASMA AND LASER-INDUCED CHEMISTRY IN SOLUTION;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2020

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