Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin-Reference-Cited by-同舟云学术

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Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin

Published:2013-08 Issue:8 Volume:58 Page:769-772
ISSN:2071-0186
Container-title:Ukrainian Journal of Physics
language:
Short-container-title:Ukr. J. Phys.

Author:

Rudenko R.M., ,Voitovych V.V.,Kras’ko M.M.,Kolosyuk A.G.,Kraichynskyi A.M.,Yukhymchuk V.O.,Makara V.A., , , , , ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

General Physics and Astronomy

Reference15 articles.

1. TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

2. Thin-film silicon solar cell technology

3. Preparation of hydrogenated amorphous silicon tin alloys

4. Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical-assisted deposition method

5. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of silicon nanocomposites by annealing of (SiOx/Sm)n multilayers: luminescence, Raman and FTIR studies;Applied Nanoscience;2023-06-07

2. Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films;Ukrainian Journal of Physics;2020-03-26

3. Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin;Ukrainian Journal of Physics;2013-12

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