Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy-Reference-Cited by-同舟云学术

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Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy

Published:2018-06-25 Issue:2 Volume:19 Page:136-144
ISSN:1818-331X
Container-title:Nuclear Physics and Atomic Energy
language:
Short-container-title:Nucl. Phys. At. Energy

Author:

Mintyanskii I.V., ,Savitskii P.I.,Kovalyuk Z.D.,Maslyuk V.T.,Megela I.G.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Nuclear and High Energy Physics

Reference18 articles.

1. 1. G.W. Mudd et al. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. Advanced Materials 25(40) (2013) 5714. https://doi.org/10.1002/adma.201302616

2. 2. N. Balakrishnan et al. Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions. Advanced Opt. Materials 2(11) (2014) 1064. http://doi.org/10.1002/adom.201400202

3. 3. G.W. Mudd et al. High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures. Advanced Materials 27(25) (2015) 3760. http://doi.org/10.1002/adma.201500889

4. 4. N. Balakrishnan et al. Engineering p-n junctions and bandgap tuning of InSe monolayers by controlled oxidation. 2D Materials 4 (2017) 025043. http://doi.org/10.1088/2053-1583/aa61e0

5. 5. A. Segura et al. Three-dimensional electrons and two-dimensional electric subbands in the transport properties of tin-doped n-type indium selenide: Polar and homopolar phonon scattering. Phys. Rev. B 43(6) (1991) 4953. http://doi.org/10.1103/physrevb.43.4953

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