The effect of photoconductivity localization in macroporous silicon-Reference-Cited by-同舟云学术

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The effect of photoconductivity localization in macroporous silicon

Published:2016-06-30 Issue:2 Volume:7 Page:246-250
ISSN:2079-1704
Container-title:Himia, Fizika ta Tehnologia Poverhni
language:
Short-container-title:Him. Fiz. Tehnol. Poverhni

Author:

Karas N.I., ,Parshin K.A.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Reference9 articles.

1. Negative photoconductivity in macroporous silicon structures.;Karas;Nucl Technol,2010

2. Stabilization of electrochemical formation of macropores inn-Si

3. Negative photoconductivity and the surface barrier effect – two connected surface effects in macroporous silicon.;Karas;Optoelectronics and Semiconductor Technics,2014

4. Positive and negative photoconductivity in macroporous silicon.;Karas,2013

5. Theoretical investigation of the surface sensinive photoeffects.;Zuev;Ukr Phys J,1973

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Peculiarities of surface photoconductivity relaxation in the structures of macroporous silicon in the visible spectrum;Himia, Fizika ta Tehnologia Poverhni;2020-06-30

2. Relaxation of "slow" negative surface photo conductivity in structures of macroporous silicon in the visible spectral region;Optoelektronìka ta napìvprovìdnikova tehnìka;2020-02-10

3. MONOPOLAR PHOTOCONDUCTIVITY OF THE INVERSION LAYER AND “SLOW”-SURFACE LEVELS IN THE STRUCTURES OF MACROPOROUS AND MONOCRYSTALLINE SILICON IN CONDITIONS OF STRONG SURFACE LIGHTNING;Optoèlektronika i poluprovodnikovaâ tehnika;2018-12-15

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