Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes-Reference-Cited by-同舟云学术

Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes

Published:2022-12-22 Issue:4 Volume:25 Page:385-393
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:SPQEO

Author:

Kukurudziak M.S.,

Abstract

Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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