High thermal performance hybrid GaInAsP/SOI ridge waveguide lasers with enhanced heat dissipation structure

Abstract

Abstract Hybrid GaInAsP/SOI ridge waveguide Fabry–Pérot lasers with reduced thermal resistance were fabricated and measured. The lasers were formed by room-temperature surface-activated bonding of InP and silicon-on-insulator wafers. Thin SiO2 film was introduced as ridge-sidewall insulation to increase heat flow to the p-electrode side-metal. By incorporating a thermal shunt structure and Au electroplating, a single-facet output power of 20 mW and lasing operation up to 110 °C were achieved for a cavity length of 2.0 mm under continuous-wave conditions. The proposed structure showed low thermal resistance of 14.3 K W−1 and a threshold current density of approximately 0.7 kA cm−2.