Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers-Reference-Cited by-同舟云学术

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Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers

Published:2020-08-27 Issue:9 Volume:59 Page:091003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujita Takashi,Sakai Shigeta,Ikeda Yuma,Yamaguchi Atsushi A.,Kusanagi Susumu,Kanitani Yuya,Kudo Yoshihiro,Tomiya Shigetaka

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/abaebc/pdf

Reference33 articles.

1. Unusual properties of the fundamental band gap of InN

2. Structure and electronic properties of InN and In-rich group III-nitride alloys

3. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

4. Theoretical study of the band-gap anomaly of InN

5. Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers;Journal of Applied Physics;2023-12-06

2. Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes;Japanese Journal of Applied Physics;2021-11-01

3. Energy diagram and parameters regarding localized states in InGaN/GaN nanocolumns;Journal of Applied Physics;2021-10-14

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