Analysis of trade-off relationships between resolution, line edge roughness, and sensitivity in extreme ultraviolet lithography using lasso regression
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab984e/pdf
Reference34 articles.
1. Front Matter: Volume 11147
2. High-NA EUV lithography exposure tool: program progress
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4. Chemical Amplification Resists for Microlithography
5. Resist blur and line edge roughness
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1. Relationship between Defect Risks and Effective Reaction Radius for Deprotection in Chemically Amplified Resist Process for Extreme Ultraviolet Lithography;Journal of Photopolymer Science and Technology;2024-05-31
2. Design strategy of extreme ultraviolet resists;Japanese Journal of Applied Physics;2024-05-01
3. Analyzing of metal organic frameworks performance in CH4 adsorption using machine learning techniques: A GBRT model based on small training dataset;Journal of Environmental Chemical Engineering;2023-06
4. Low-voltage electron scattering in advanced extreme ultraviolet masks;Japanese Journal of Applied Physics;2022-08-01
5. Study on deprotonation from radiation-induced ionized acrylate polymers including acid-generation promoters for improving chemically amplified resists;Japanese Journal of Applied Physics;2022-05-25
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