Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage-Reference-Cited by-同舟云学术

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Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage

Published:2021-10-01 Issue:10 Volume:60 Page:104501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ogasawara Munehiro,Yoshida Ryoichiro,Oshima Yuta,Ando Motoki,Kimura Arisa,Hirakawa Kenji,Iwase Masayuki,Nabeya Shinsuke,Yoda Takashi,Ishihara Noboru,Ito Hiroyuki

Funder

Tokyo Institute of Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ac25cd/pdf

Reference34 articles.

1. Total ionizing dose effects in MOS oxides and devices

2. Radiation-induced edge effects in deep submicron CMOS transistors

3. Total-Ionizing-Dose Effects in Modern CMOS Technologies

4. Radiation Effects in MOS Oxides

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Validation of a V-Gate n-MOSFET-Based RH CMOS Logic Circuit with Tolerance to the TID Effect;Electronics;2023-08-03

2. Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification;Japanese Journal of Applied Physics;2023-02-09

3. Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology;Japanese Journal of Applied Physics;2022-03-30

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