Abstract
Abstract
The reduction of graphene oxide (GO) through atomic hydrogen annealing (AHA) and soft X-ray irradiation is investigated using microwell substrates with μm-sized holes with and without Ni underlayers. The GO film is reduced through AHA at 170 °C and soft X-ray irradiation at 150 °C. In contrast, some GO films are not only reduced but also amorphized through soft X-ray irradiation. The effect of the Ni underlayer on GO reduction differs between AHA and soft X-ray irradiation. In AHA, the difference in GO reduction between SiO2 and Ni underlayer originates from the atomic hydrogen density on the sample surface. On the other hand, in soft X-ray irradiation, the difference in GO reduction between SiO2 and the Ni underlayer originates from the excited electrons generated by soft X-ray irradiation. Reduction without damage is more likely to occur in the suspended GO than in the supported GO.
Subject
General Physics and Astronomy,General Engineering
Cited by
1 articles.
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