Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage

Abstract

Abstract A monolithic fully-controlled high electron mobility transistor (HEMT) bidirectional power switch (FC-HEMT BPS) is studied and implemented for ultra-low turn-on voltage and high threshold voltage. The alternately embedded recess Schottky barrier diodes with p-GaN gate HEMTs in the common active region is a distinctive feature of the proposed device. The FC-HEMT BPS is a sophisticated device with two independent gate controls, capable of operating in four distinct modes. Its flexibility in managing current and voltage in the first and third quadrants makes it versatile for a range of applications in power electronics. The proposed device offers notable advantages over conventional counterparts, including reduced turn-on voltage V ON-D of ∼0.4 V in diode modes and the elimination of turn-on voltage V ON-B (i.e. 0 V) in bidirectional conduction mode. These features make it a promising solution for efficient power electronics applications.