Measurement of changes in resistance of a Ag2+δ S nano-island on removal of dopant δ-Ag atoms

Abstract

Abstract Changes in the resistance of a Ag2+δ S nano-island, in which non-stoichiometric δ-Ag atoms work as a dopant in an n-type semiconductor, was induced by electrochemical removal of the dopant δ-Ag atoms using conductive-atomic force microscopy. The removed Ag atoms grew a Ag nanowire on a nano-island, the height of which corresponded to the measured resistance. Conductance (1/resistance) linearly decreased as the height of a Ag nanowire increased, in accordance with the theory of semiconductor conductivity. The technique has the potential for the dynamic control of conductance in nanostructures post-fabrication.