Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes-Reference-Cited by-同舟云学术

Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes

Published:2020-03-30 Issue:4 Volume:13 Page:043006
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Song Anke,Chen Jiajun,Lan Jinshen,Fu Deyi,Zhou Jiangpeng,Zhong Zhibai,Guo Jian,Wu Xuefeng,Wu Yaping^ORCID,Li Xu^ORCID,Huang Shengli,Wu Zhiming,Kang Junyong

Funder

Science and Technology Project of Fujian Province of China

the National Key Research and Development Program of China

the Natural Science Foundation of Jiangxi Province of China

the National Natural Science Foundations of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab810b/pdf

Reference32 articles.

1. Spin Physics in Semiconductors

2. Spin relaxation of conduction electrons

3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

4. Anisotropic electron spin relaxation in bulk GaN

5. Spin Relaxation in InGaN Quantum Disks in GaN Nanowires

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