Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
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1. Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications;Journal of Computational Electronics;2021-01-02
2. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic;Micromachines;2020-02-03
3. All-GaN-Integrated Cascode Heterojunction Field Effect Transistors;IEEE Transactions on Power Electronics;2017-11
4. Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4as the gate dielectric;Semiconductor Science and Technology;2015-10-09
5. Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT;Microelectronics Reliability;2015-02
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