Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas-Reference-Cited by-同舟云学术

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Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas

Published:2008-08-22 Issue:8 Volume:47 Page:6960-6964
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Hack Joo,Kwon Bong Soo,Kim Hyun Woo,Kim Seon Il,Yoo Dong-Geun,Boo Jin-Hyo,Lee Nae-Eung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering

2. Transparent and conductive ZnO:Al films deposited by large area reactive magnetron sputtering

3. Inductively coupled plasma reactive ion etching of ZnO using BCl[sub 3]-based plasmas

4. Dry etching of ZnO films and plasma-induced damage to optical properties

5. Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface properties of Al-doped ZnO thin film before and after CF₄/Ar plasma etching;Plasma Science and Technology;2022-06-21

2. High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma;Materials Research Express;2020-10-01

3. Effects of hydrogen ion irradiation on zinc oxide etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-09

4. Chemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma;Transactions on Electrical and Electronic Materials;2017-04-25

5. Mass-selected ion beam study on etching characteristics of ZnO by methane-based plasma;JPN J APPL PHYS;2016

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