Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE-Reference-Cited by-同舟云学术

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Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE

Published:1984-06-20 Issue:Part 2, No. 6 Volume:23 Page:L360-L362
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujita Shigeo,Matsuda Yoshinobu,Sasaki Akio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic Studies of ZnSe Crystals Subjected to Laser Irradiation;physica status solidi (a);1999-09

2. MOVPE growth of ZnS on (100)GaAs using dimethylzinc and ditertiarybutyl sulphide precursors;Journal of Crystal Growth;1999-03

3. Metal organic vapour phase epitaxy and luminescence studies of GaAs/ZnSe double heterostructures;Semiconductor Science and Technology;1991-07-01

4. Effects of Ammonia on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1990-07-20

5. OMVPE growth of ZnSe and ZnSxSe1-x using methylselenol as a selenium source;Journal of Crystal Growth;1990-07

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