High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure;Japanese Journal of Applied Physics;2024-01-17
2. High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays;IEEE Transactions on Electron Devices;2021-08
3. Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics;IEEE Journal of the Electron Devices Society;2021
4. Historical evolution of pulsed laser annealing for semiconductor processing;Laser Annealing Processes in Semiconductor Technology;2021
5. Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V −1;Advanced Engineering Materials;2020-02-13
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