Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization-Reference-Cited by-同舟云学术

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Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization

Published:2001-11-15 Issue:Part 1, No. 11 Volume:40 Page:6212-6220
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Shui Jinn,Tsai Hao Yi,Sun Shi Chung,Shiao Ming Hua

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growth;Microelectronic Engineering;2013-06

2. Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations;Surface Science;2007-08

3. An investigation on the influence of electromagnetic interference induced in conducting wire of universal LEDs;Microelectronics Reliability;2007-06

4. Characteristics of sputtered Ta–B–N thin films as diffusion barriers between copper and silicon;Applied Surface Science;2006-11

5. Tantalum carbide etch characterization in inductively coupled Ar∕Cl2∕HBr plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-09

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