Enhanced Fatigue and Data Retention Characteristics of Pb(Zr, Ti)O3Thin Films by the Selectively Nucleated Lateral Crystallization Method-Reference-Cited by-同舟云学术

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Enhanced Fatigue and Data Retention Characteristics of Pb(Zr, Ti)O3Thin Films by the Selectively Nucleated Lateral Crystallization Method

Published:2001-01-15 Issue:Part 1, No. 1 Volume:40 Page:229-233
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Jang-Sik,Joo Seung-Ki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures;Journal of Applied Physics;2016-07-14

2. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor;Scientific Reports;2016-03-23

3. Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr0.52Ti0.48O3for very-large-scale-integrated memory;Journal of Physics D: Applied Physics;2016-01-14

4. Contribution of structural order–disorder to the room-temperature photoluminescence of lead zirconate titanate powders;Journal of Luminescence;2007-12

5. Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes;Applied Physics Letters;2004-04-19

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