Atomic Arrangement at the AlN/Si(110) Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=6/a=061104/pdf
Reference10 articles.
1. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
2. Ultraviolet and violet GaN light emitting diodes on silicon
3. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
4. Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)
5. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
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1. AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C;Advanced Functional Materials;2022-06-21
2. Nitride Semiconductors;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
3. GaN-On-Si Epitaxy;digital Encyclopedia of Applied Physics;2019-08-20
4. Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy;physica status solidi (a);2018-08-12
5. Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2017-12-14
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