Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates-Reference-Cited by-同舟云学术

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Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates

Published:2009-02-20 Issue:2 Volume:48 Page:021208
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Toyoda Eiji,Sakai Akira,Isogai Hiromichi,Senda Takeshi,Izunome Koji,Omote Kazuhiko,Nakatsuka Osamu,Zaima Shigeaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference3 articles.

1. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces

2. Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

3. Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incommensurate grain boundary in silicon and the silver-ratio sequence;Physical Review B;2019-09-05

2. Technology Evolution for Silicon Nanoelectronics: Postscaling Technology;Japanese Journal of Applied Physics;2013-03-01

3. Application of the O-lattice theory for the reconstruction of the high-angle near 90° tilt Si(110)/(001) boundary created by wafer bonding;Acta Materialia;2012-02

4. Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory;Solid State Phenomena;2011-08

5. Microscopic Structure of Directly Bonded Silicon Substrates;Key Engineering Materials;2011-02

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