Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
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2. Potassium-doped n-type stacked graphene layers;Materials Research Express;2019-02-06
3. Potassium-doped n-type bilayer graphene;Applied Physics Letters;2018-01-22
4. Basic Concept of Field-Effect Transistors;Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor;2017-10-31
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