Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60-Reference-Cited by-同舟云学术

Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60

Published:2009-03-05 Issue:3 Volume:48 Page:030208
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inoue Keita,Plumwongrot Dhanorm,Nishiyama Nobuhiko,Sakamoto Shinichi,Enomoto Haruki,Tamura Shigeo,Maruyama Takeo,Arai Shigehisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm

2. Ultracompact optical buffers on a silicon chip

3. Losses in single-mode silicon-on-insulator strip waveguides and bends

4. Nanocomposite resist system

5. Total Room Temperature Wet Cleaning for Si Substrate Surface

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