Passivation of P-Type Dopants in GaAs by Process Induced Hydrogenation and Reactivation by Thermal Annealing-Reference-Cited by-同舟云学术

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Passivation of P-Type Dopants in GaAs by Process Induced Hydrogenation and Reactivation by Thermal Annealing

Published:1992-12-01 Issue:Part 2, No. 12A Volume:31 Page:L1704-L1706
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakajima Osaake,Nagata Koichi,Makimura Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode;IEEE Transactions on Electron Devices;1998

2. Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing;MRS Proceedings;1998-01

3. Hydrogenation effects during high-density plasma processing of GaAs MESFETS;Semiconductor Science and Technology;1997-09-01

4. High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11

5. Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters;Japanese Journal of Applied Physics;1996-10-15

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