AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology-Reference-Cited by-同舟云学术

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AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology

Published:1996-08-15 Issue:Part 1, No. 8 Volume:35 Page:4199-4202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Shoou-Jinn,Sheu Jinn-Kong,Su Yan-Kuin,Jou Ming-Jiunn,Chi Gou-Chung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration Technology of Micro-LED for Next-Generation Display;Research;2023-01

2. Analysis of the Use of Reflectors and Reflective Surfaces for Increasing the Light Efficiency of LEDs Based on AlGaInP Heterostructures;Materials Science Forum;2019-01

3. Investigation of the saturation characteristic and lifetime of the novel AlGaInP lightemitting diodes;Acta Physica Sinica;2014

4. Nitride-Based LEDs and Superluminescent LEDs;Comprehensive Semiconductor Science and Technology;2011

5. AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact;Chinese Physics;2007-11

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