Morphology Control of Films Formed by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate/Ozone System-Reference-Cited by-同舟云学术

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Morphology Control of Films Formed by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate/Ozone System

Published:1996-08-15 Issue:Part 1, No. 8 Volume:35 Page:4438-4443
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Adachi Motoaki,Okuyama Kikuo,Fujimoto Toshiyuki,Sato Jun-ichi,Muroyama Masakazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-SituMeasurements of Charged Nanoparticles Generated During Hot Wire Chemical Vapor Deposition of Silicon Using Particle Beam Mass Spectrometer;Aerosol Science and Technology;2013-01

2. Generation of Charged Nanoparticles and Their Deposition Behavior under Alternating Electric Bias during Chemical Vapor Deposition of Silicon;The Journal of Physical Chemistry C;2012-11-16

3. Generation of Charged Nanoparticles During the Synthesis of GaN Nanostructures by Atmospheric-Pressure Chemical Vapor Deposition;Aerosol Science and Technology;2012-10

4. Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition;Vacuum;2009-08

5. Boundary Layer Chemistry Probed by in Situ Infrared Spectroscopy during SiO2 Deposition at Atmospheric Pressure from Tetraethylorthosilicate and Ozone;The Journal of Physical Chemistry B;2005-08-05

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