Kinetics of CFX(x=1 –3) Radicals and Electrons in RF CF4-H2, CHF3-H2and CHF3-O2Plasmas
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On treatment of ultra-low-k SiCOH in CF4 plasmas: correlation between the concentration of etching products and etching rate;Applied Physics B;2015-03-07
2. Simulation of Gas-Phase Kinetics in $\hbox{CHF}_{3}:\hbox{H}_{2}: \hbox{O}_{2}$ Mixtures;IEEE Transactions on Plasma Science;2007-12
3. Growth of Fluorocarbon Macromolecules in the Gas Phase: II. The Growth Mechanisms of Large Positive Ions Observed in the Downstream Region of Ar/CF4Plasmas;Japanese Journal of Applied Physics;2006-06-08
4. Real dimensional simulation of SiO2 etching in CF4 + H2 plasma;Applied Surface Science;2004-01
5. Measurement techniques of radicals, their gas phase and surface reactions in reactive plasma processing;Applied Surface Science;2002-05
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