A High Performance p-Channel Transistor: β-MOS FET
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Published:1996-02-28
Issue:Part 1, No. 2B
Volume:35
Page:906-909
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yoh Kanji,Koizumi Ryouji,Hashimoto Naotaka,Ikeda Shuji
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering