Temperature Dependence of Molecular Beam Epitaxial Growth Rates for InxGa1-xAs and InxAl1-xAs-Reference-Cited by-同舟云学术

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Temperature Dependence of Molecular Beam Epitaxial Growth Rates for InxGa1-xAs and InxAl1-xAs

Published:1986-09-20 Issue:Part 1, No. 9 Volume:25 Page:1441-1442
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chika Shigeaki,Kato Hiromu,Nakayama Masaaki,Sano Naokatsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of growth conditions on the quality of strained InAlGaAs/AlGaAs quantum wells grown by MOCVD;Applied Physics A;2019-01-19

2. Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source;Journal of Crystal Growth;2017-11

3. Studies of Ultrathin InGaAs Quantum Wells Grown at Different Temperatures by Magneto-Photoluminescence;Japanese Journal of Applied Physics;2005-02-08

4. Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates;Japanese Journal of Applied Physics;2000-07-30

5. In Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates.;Hyomen Kagaku;2000

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