X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity Ozone-Reference-Cited by-同舟云学术

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X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity Ozone

Published:1995-12-01 Issue:Part 2, No. 12A Volume:34 Page:L1606-L1608
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kurokawa Akira,Ichimura Shingo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1−xMgxO3−δ;Japanese Journal of Applied Physics;2016-04-21

4. Silicon oxidation by ozone;Journal of Physics: Condensed Matter;2009-03-11

5. Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface;Japanese Journal of Applied Physics;2004-01-13

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