Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament-Reference-Cited by-同舟云学术

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Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament

Published:1995-10-15 Issue:Part 1, No. 10 Volume:34 Page:5743-5750
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chattopadhyay S.,Das Debabrata,Sharma S. N.,Barua A K.,Banerjee Ratnabali,Kshirsagar S. T.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural changes in nanocrystalline silicon deposited by rf-magnetron sputtering;Applied Physics A;2004-11

2. Gas Phase Reactions between SiH4 and B2H6: A Theoretical Study;The Journal of Physical Chemistry A;2003-02-13

3. Hot-wire plasma assisted chemical vapor deposition: A deposition technique to obtain silicon thin films;Journal of Applied Physics;2002-02

4. Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique;Materials Science and Engineering: C;2001-08

5. Nanocrystalline Undoped Silicon Films Produce by Hot Wire Plasma Assisted Technique;MRS Proceedings;2000

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